STGWA30HP65FB2 by STMicroelectronics – Specifications

STMicroelectronics STGWA30HP65FB2 is a STGWA30HP65FB2 from STMicroelectronics, part of the IGBTs. It is designed for 167W 50A 650V FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 71ns
  • Power Dissipation (Pd): 167W
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 50A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 90nC
  • Diode Reverse Recovery Time (Trr): 140ns

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.558 grams.

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Full Specifications of STGWA30HP65FB2

Model NumberSTGWA30HP65FB2
Model NameSTMicroelectronics STGWA30HP65FB2
CategoryIGBTs
BrandSTMicroelectronics
Description167W 50A 650V FS(Field Stop) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.558 grams / 0.231327 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))71ns
Power Dissipation (Pd)167W
Turn?on Delay Time (Td(on))-
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)50A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,30A
Total Gate Charge (Qg@Ic,Vge)90nC
Diode Reverse Recovery Time (Trr)140ns
Turn?on Switching Loss (Eon)-

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