STGWA30IH65DF by STMicroelectronics – Specifications

STMicroelectronics STGWA30IH65DF is a STGWA30IH65DF from STMicroelectronics, part of the IGBTs. It is designed for 180W 60A 650V FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 200ns
  • Power Dissipation (Pd): 180W
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.05V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 80nC
  • Turn?off Switching Loss (Eoff): 0.123mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.558 grams.

Full Specifications of STGWA30IH65DF

Model NumberSTGWA30IH65DF
Model NameSTMicroelectronics STGWA30IH65DF
CategoryIGBTs
BrandSTMicroelectronics
Description180W 60A 650V FS(Field Stop) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.558 grams / 0.231327 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))200ns
Power Dissipation (Pd)180W
Turn?on Delay Time (Td(on))-
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.05V@15V,30A
Total Gate Charge (Qg@Ic,Vge)80nC
Turn?off Switching Loss (Eoff)0.123mJ
Turn?on Switching Loss (Eon)-

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