STGWA30M65DF2 by STMicroelectronics – Specifications

STMicroelectronics STGWA30M65DF2 is a STGWA30M65DF2 from STMicroelectronics, part of the IGBTs. It is designed for 258W 60A 650V FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 115ns
  • Power Dissipation (Pd): 258W
  • Turn?on Delay Time (Td(on)): 31.6ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 80nC
  • Diode Reverse Recovery Time (Trr): 140ns
  • Turn?off Switching Loss (Eoff): 0.96mJ
  • Turn?on Switching Loss (Eon): 0.3mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.34 grams.

More on STGWA30M65DF2

Full Specifications of STGWA30M65DF2

Model NumberSTGWA30M65DF2
Model NameSTMicroelectronics STGWA30M65DF2
CategoryIGBTs
BrandSTMicroelectronics
Description258W 60A 650V FS(Field Stop) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.340 grams / 0.294185 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))115ns
Power Dissipation (Pd)258W
Turn?on Delay Time (Td(on))31.6ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,30A
Total Gate Charge (Qg@Ic,Vge)80nC
Diode Reverse Recovery Time (Trr)140ns
Turn?off Switching Loss (Eoff)0.96mJ
Turn?on Switching Loss (Eon)0.3mJ

Compare STMicroelectronics - STGWA30M65DF2 With Other 125 Models

Related Models - STGWA30M65DF2 Alternative

Scroll to Top