STGWA75M65DF2 by STMicroelectronics – Specifications

STMicroelectronics STGWA75M65DF2 is a STGWA75M65DF2 from STMicroelectronics, part of the IGBTs. It is designed for 468W 120A 650V FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 125ns
  • Power Dissipation (Pd): 468W
  • Turn?on Delay Time (Td(on)): 47ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 120A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,75A
  • Total Gate Charge (Qg@Ic,Vge): 225nC
  • Diode Reverse Recovery Time (Trr): 165ns
  • Turn?off Switching Loss (Eoff): 2.54mJ
  • Turn?on Switching Loss (Eon): 0.69mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 9.58 grams.

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Full Specifications of STGWA75M65DF2

Model NumberSTGWA75M65DF2
Model NameSTMicroelectronics STGWA75M65DF2
CategoryIGBTs
BrandSTMicroelectronics
Description468W 120A 650V FS(Field Stop) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:9.580 grams / 0.337925 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))125ns
Power Dissipation (Pd)468W
Turn?on Delay Time (Td(on))47ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)120A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,75A
Total Gate Charge (Qg@Ic,Vge)225nC
Diode Reverse Recovery Time (Trr)165ns
Turn?off Switching Loss (Eoff)2.54mJ
Turn?on Switching Loss (Eon)0.69mJ

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