STGWT60H65DFB by STMicroelectronics – Specifications

STMicroelectronics STGWT60H65DFB is a STGWT60H65DFB from STMicroelectronics, part of the IGBTs. It is designed for 375W 80A 650V FS(Field Stop) TO-3P-3 IGBTs ROHS. This product comes in a TO-3P-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 160ns
  • Power Dissipation (Pd): 375W
  • Turn?on Delay Time (Td(on)): 51ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 80A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,60A
  • Total Gate Charge (Qg@Ic,Vge): 306nC
  • Diode Reverse Recovery Time (Trr): 60ns
  • Turn?off Switching Loss (Eoff): 0.626mJ
  • Turn?on Switching Loss (Eon): 1.09mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.916 grams.

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Full Specifications of STGWT60H65DFB

Model NumberSTGWT60H65DFB
Model NameSTMicroelectronics STGWT60H65DFB
CategoryIGBTs
BrandSTMicroelectronics
Description375W 80A 650V FS(Field Stop) TO-3P-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.916 grams / 0.243955 oz
Package / CaseTO-3P-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))160ns
Power Dissipation (Pd)375W
Turn?on Delay Time (Td(on))51ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,60A
Total Gate Charge (Qg@Ic,Vge)306nC
Diode Reverse Recovery Time (Trr)60ns
Turn?off Switching Loss (Eoff)0.626mJ
Turn?on Switching Loss (Eon)1.09mJ

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