STGYA50M120DF3 by STMicroelectronics – Specifications

STMicroelectronics STGYA50M120DF3 is a STGYA50M120DF3 from STMicroelectronics, part of the IGBTs. It is designed for 535W 100A 1.2kV FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 258ns
  • Power Dissipation (Pd): 535W
  • Turn?on Delay Time (Td(on)): 38ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 100A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,50A
  • Total Gate Charge (Qg@Ic,Vge): 194nC
  • Diode Reverse Recovery Time (Trr): 325ns
  • Turn?off Switching Loss (Eoff): 3.2mJ
  • Turn?on Switching Loss (Eon): 2mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.9 grams.

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Full Specifications of STGYA50M120DF3

Model NumberSTGYA50M120DF3
Model NameSTMicroelectronics STGYA50M120DF3
CategoryIGBTs
BrandSTMicroelectronics
Description535W 100A 1.2kV FS(Field Stop) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.900 grams / 0.243391 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))258ns
Power Dissipation (Pd)535W
Turn?on Delay Time (Td(on))38ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)100A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,50A
Total Gate Charge (Qg@Ic,Vge)194nC
Diode Reverse Recovery Time (Trr)325ns
Turn?off Switching Loss (Eoff)3.2mJ
Turn?on Switching Loss (Eon)2mJ

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