Transphorm TP65H050G4BS is a TP65H050G4BS from Transphorm, part of the MOSFETs. It is designed for 650V 34A 60mΩ@22A,10V 119W 4.8V@700uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 34A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@22A,10V
- Power Dissipation (Pd): 119W
- Gate Threshold Voltage (Vgs(th)@Id): 4.8V@700uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1nF@400V
- Total Gate Charge (Qg@Vgs): 24nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of TP65H050G4BS
| Model Number | TP65H050G4BS |
| Model Name | Transphorm TP65H050G4BS |
| Category | MOSFETs |
| Brand | Transphorm |
| Description | 650V 34A 60mΩ@22A,10V 119W 4.8V@700uA 1PCSNChannel TO-263 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-263 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 34A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 60mΩ@22A,10V |
| Power Dissipation (Pd) | 119W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.8V@700uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1nF@400V |
| Total Gate Charge (Qg@Vgs) | 24nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |