TP65H150G4LSG-TR by Transphorm – Specifications

Transphorm TP65H150G4LSG-TR is a TP65H150G4LSG-TR from Transphorm, part of the MOSFETs. It is designed for 650V 13A 52W 180mΩ@8.5A,10V 4.8V@500uA 1PCSNChannel PQFN-3(8x8) MOSFETs ROHS. This product comes in a PQFN-3(8x8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 13A
  • Power Dissipation (Pd): 52W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@8.5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.8V@500uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 598pF@400V
  • Total Gate Charge (Qg@Vgs): 8nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on TP65H150G4LSG-TR

Full Specifications of TP65H150G4LSG-TR

Model NumberTP65H150G4LSG-TR
Model NameTransphorm TP65H150G4LSG-TR
CategoryMOSFETs
BrandTransphorm
Description650V 13A 52W 180mΩ@8.5A,10V 4.8V@500uA 1PCSNChannel PQFN-3(8x8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePQFN-3(8x8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)13A
Power Dissipation (Pd)52W
Drain Source On Resistance (RDS(on)@Vgs,Id)180mΩ@8.5A,10V
Gate Threshold Voltage (Vgs(th)@Id)4.8V@500uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)598pF@400V
Total Gate Charge (Qg@Vgs)8nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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