Transphorm TPD3215M is a TPD3215M from Transphorm, part of the MOSFETs. It is designed for 600V 70A 470W 34mΩ@30A,8V 2 N-Channel - MOSFETs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Configuration: Half Bridge
- Continuous Drain Current (Id): 70A
- Power Dissipation (Pd): 470W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 34mΩ@30A,8V
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 2.26nF@100V
- Total Gate Charge (Qg@Vgs): 28nC@8V
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on TPD3215M
Full Specifications of TPD3215M
| Model Number | TPD3215M |
| Model Name | Transphorm TPD3215M |
| Category | MOSFETs |
| Brand | Transphorm |
| Description | 600V 70A 470W 34mΩ@30A,8V 2 N-Channel - MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | - |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Configuration | Half Bridge |
| Continuous Drain Current (Id) | 70A |
| Power Dissipation (Pd) | 470W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 34mΩ@30A,8V |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Type | 2 N-Channel |
| Input Capacitance (Ciss@Vds) | 2.26nF@100V |
| Total Gate Charge (Qg@Vgs) | 28nC@8V |
| Operating Temperature | -40℃~+150℃@(Tj) |