Transphorm TPH3208LDG is a TPH3208LDG from Transphorm, part of the MOSFETs. It is designed for 650V 20A 96W 130mΩ@13A,8V 2.6V@300uA 1PCSNChannel PQFN-3(8x8) MOSFETs ROHS. This product comes in a PQFN-3(8x8) package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 20A
- Power Dissipation (Pd): 96W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@13A,8V
- Gate Threshold Voltage (Vgs(th)@Id): 2.6V@300uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 760pF@400V
- Total Gate Charge (Qg@Vgs): 14nC@8V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of TPH3208LDG
Model Number | TPH3208LDG |
Model Name | Transphorm TPH3208LDG |
Category | MOSFETs |
Brand | Transphorm |
Description | 650V 20A 96W 130mΩ@13A,8V 2.6V@300uA 1PCSNChannel PQFN-3(8x8) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | PQFN-3(8x8) |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 20A |
Power Dissipation (Pd) | 96W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 130mΩ@13A,8V |
Gate Threshold Voltage (Vgs(th)@Id) | 2.6V@300uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 760pF@400V |
Total Gate Charge (Qg@Vgs) | 14nC@8V |
Operating Temperature | -55℃~+150℃@(Tj) |