VBsemi Elec 13N10-VB is a 13N10-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 18A 3.75W 127mΩ@10V,20A 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 18A
- Power Dissipation (Pd): 3.75W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 127mΩ@10V,20A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.23 grams.
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Full Specifications of 13N10-VB
| Model Number | 13N10-VB |
| Model Name | VBsemi Elec 13N10-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 18A 3.75W 127mΩ@10V,20A 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 3.230 grams / 0.113935 oz |
| Package / Case | ITO-220AB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 18A |
| Power Dissipation (Pd) | 3.75W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 127mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |