VBsemi Elec 20N03-VB is a 20N03-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 21.8A 7mΩ@10V,21.8A 3.25W 2V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 21.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@10V,21.8A
- Power Dissipation (Pd): 3.25W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.373 grams.
More on 20N03-VB
Full Specifications of 20N03-VB
| Model Number | 20N03-VB |
| Model Name | VBsemi Elec 20N03-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 30V 21.8A 7mΩ@10V,21.8A 3.25W 2V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.373 grams / 0.013157 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 21.8A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 7mΩ@10V,21.8A |
| Power Dissipation (Pd) | 3.25W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Type | 1PCSNChannel |