2N65 TO252-VB by VBsemi Elec – Specifications

VBsemi Elec 2N65 TO252-VB is a 2N65 TO252-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 2A 60W 3.8Ω@10V,3.1A 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 2A
  • Power Dissipation (Pd): 60W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.8Ω@10V,3.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.383 grams.

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Full Specifications of 2N65 TO252-VB

Model Number2N65 TO252-VB
Model NameVBsemi Elec 2N65 TO252-VB
CategoryMOSFETs
BrandVBsemi Elec
Description650V 2A 60W 3.8Ω@10V,3.1A 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.383 grams / 0.01351 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)2A
Power Dissipation (Pd)60W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.8Ω@10V,3.1A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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