VBsemi Elec 2N65 TO252-VB is a 2N65 TO252-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 2A 60W 3.8Ω@10V,3.1A 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 2A
- Power Dissipation (Pd): 60W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.8Ω@10V,3.1A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.383 grams.
More on 2N65 TO252-VB
Full Specifications of 2N65 TO252-VB
| Model Number | 2N65 TO252-VB |
| Model Name | VBsemi Elec 2N65 TO252-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 650V 2A 60W 3.8Ω@10V,3.1A 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.383 grams / 0.01351 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 2A |
| Power Dissipation (Pd) | 60W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.8Ω@10V,3.1A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |