2SJ383-VB by VBsemi Elec – Specifications

VBsemi Elec 2SJ383-VB is a 2SJ383-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 12.9A 2.7W 43mΩ@10V,10A 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 12.9A
  • Power Dissipation (Pd): 2.7W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 43mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.386 grams.

More on 2SJ383-VB

Full Specifications of 2SJ383-VB

Model Number2SJ383-VB
Model NameVBsemi Elec 2SJ383-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 12.9A 2.7W 43mΩ@10V,10A 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.386 grams / 0.013616 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)12.9A
Power Dissipation (Pd)2.7W
Drain Source On Resistance (RDS(on)@Vgs,Id)43mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel

Compare VBsemi Elec - 2SJ383-VB With Other 200 Models

Related Models - 2SJ383-VB Alternative

Scroll to Top