2SJ485-VB by VBsemi Elec – Specifications

VBsemi Elec 2SJ485-VB is a 2SJ485-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 30A 4W 61mΩ@10V,5A 3V@250uA 1PCSPChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 30A
  • Power Dissipation (Pd): 4W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 61mΩ@10V,5A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.66 grams.

More on 2SJ485-VB

Full Specifications of 2SJ485-VB

Model Number2SJ485-VB
Model NameVBsemi Elec 2SJ485-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 30A 4W 61mΩ@10V,5A 3V@250uA 1PCSPChannel TO-251 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.660 grams / 0.023281 oz
Package / CaseTO-251
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)30A
Power Dissipation (Pd)4W
Drain Source On Resistance (RDS(on)@Vgs,Id)61mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel

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