30N20-VB by VBsemi Elec – Specifications

VBsemi Elec 30N20-VB is a 30N20-VB from VBsemi Elec, part of the MOSFETs. It is designed for 200V 40A 60mΩ@10V,20A 3.75W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,20A
  • Power Dissipation (Pd): 3.75W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.67 grams.

Full Specifications of 30N20-VB

Model Number30N20-VB
Model NameVBsemi Elec 30N20-VB
CategoryMOSFETs
BrandVBsemi Elec
Description200V 40A 60mΩ@10V,20A 3.75W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.670 grams / 0.094182 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)40A
Drain Source On Resistance (RDS(on)@Vgs,Id)60mΩ@10V,20A
Power Dissipation (Pd)3.75W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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