VBsemi Elec 30N20-VB is a 30N20-VB from VBsemi Elec, part of the MOSFETs. It is designed for 200V 40A 60mΩ@10V,20A 3.75W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 40A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,20A
- Power Dissipation (Pd): 3.75W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.67 grams.
More on 30N20-VB
Full Specifications of 30N20-VB
| Model Number | 30N20-VB |
| Model Name | VBsemi Elec 30N20-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 200V 40A 60mΩ@10V,20A 3.75W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.670 grams / 0.094182 oz |
| Package / Case | TO-220AB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 40A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 60mΩ@10V,20A |
| Power Dissipation (Pd) | 3.75W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |