VBsemi Elec 80N10-VB is a 80N10-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 100A 250W 8.5mΩ@10V,30A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 100A
- Power Dissipation (Pd): 250W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@10V,30A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 4.2 grams.
More on 80N10-VB
Full Specifications of 80N10-VB
| Model Number | 80N10-VB |
| Model Name | VBsemi Elec 80N10-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 100A 250W 8.5mΩ@10V,30A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 4.200 grams / 0.148151 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 100A |
| Power Dissipation (Pd) | 250W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.5mΩ@10V,30A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |