80N10-VB by VBsemi Elec – Specifications

VBsemi Elec 80N10-VB is a 80N10-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 100A 250W 8.5mΩ@10V,30A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 250W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@10V,30A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 4.2 grams.

Full Specifications of 80N10-VB

Model Number80N10-VB
Model NameVBsemi Elec 80N10-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 100A 250W 8.5mΩ@10V,30A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:4.200 grams / 0.148151 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)250W
Drain Source On Resistance (RDS(on)@Vgs,Id)8.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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