VBsemi Elec AOI4N60-VB is a AOI4N60-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 2.2Ω@10V 3.5V 1PCSNChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2Ω@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.46 grams.
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Full Specifications of AOI4N60-VB
| Model Number | AOI4N60-VB |
| Model Name | VBsemi Elec AOI4N60-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 650V 2.2Ω@10V 3.5V 1PCSNChannel TO-251 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.460 grams / 0.0515 oz |
| Package / Case | TO-251 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.2Ω@10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V |
| Type | 1PCSNChannel |