VBsemi Elec AP4435GJ-VB is a AP4435GJ-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 40A 18mΩ@10V,40A 1PCSPChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 40A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,40A
- Type: 1PCSPChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.81 grams.
More on AP4435GJ-VB
Full Specifications of AP4435GJ-VB
| Model Number | AP4435GJ-VB |
| Model Name | VBsemi Elec AP4435GJ-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 30V 40A 18mΩ@10V,40A 1PCSPChannel TO-251 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.810 grams / 0.028572 oz |
| Package / Case | TO-251 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 40A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 18mΩ@10V,40A |
| Power Dissipation (Pd) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |