AP4435GJ-VB by VBsemi Elec – Specifications

VBsemi Elec AP4435GJ-VB is a AP4435GJ-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 40A 18mΩ@10V,40A 1PCSPChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,40A
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.81 grams.

Full Specifications of AP4435GJ-VB

Model NumberAP4435GJ-VB
Model NameVBsemi Elec AP4435GJ-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 40A 18mΩ@10V,40A 1PCSPChannel TO-251 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.810 grams / 0.028572 oz
Package / CaseTO-251
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)40A
Drain Source On Resistance (RDS(on)@Vgs,Id)18mΩ@10V,40A
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-

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