BSC082N10LS G-VB by VBsemi Elec – Specifications

VBsemi Elec BSC082N10LS G-VB is a BSC082N10LS G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 5mΩ@10V 3V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS. This product comes in a DFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.145 grams.

More on BSC082N10LS G-VB

Full Specifications of BSC082N10LS G-VB

Model NumberBSC082N10LS G-VB
Model NameVBsemi Elec BSC082N10LS G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 5mΩ@10V 3V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.145 grams / 0.005115 oz
Package / CaseDFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Drain Source On Resistance (RDS(on)@Vgs,Id)5mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)3V
Type1PCSNChannel

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