BSZ165N04NS G-VB by VBsemi Elec – Specifications

VBsemi Elec BSZ165N04NS G-VB is a BSZ165N04NS G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 40V 4.5mΩ@10V 3V 1PCSNChannel DFN-8(3x3) MOSFETs ROHS. This product comes in a DFN-8(3x3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.19 grams.

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Full Specifications of BSZ165N04NS G-VB

Model NumberBSZ165N04NS G-VB
Model NameVBsemi Elec BSZ165N04NS G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description40V 4.5mΩ@10V 3V 1PCSNChannel DFN-8(3x3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.190 grams / 0.006702 oz
Package / CaseDFN-8(3x3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Drain Source On Resistance (RDS(on)@Vgs,Id)4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)3V
Type1PCSNChannel

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