VBsemi Elec CEP13N10L-VB is a CEP13N10L-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 127mΩ@10V 4V 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 127mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.1 grams.
More on CEP13N10L-VB
Full Specifications of CEP13N10L-VB
| Model Number | CEP13N10L-VB |
| Model Name | VBsemi Elec CEP13N10L-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 127mΩ@10V 4V 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.100 grams / 0.074075 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 127mΩ@10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V |
| Type | 1PCSNChannel |