VBsemi Elec FDB12N50F-VB is a FDB12N50F-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 12A 800mΩ@10V,12A 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 12A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@10V,12A
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.23 grams.
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Full Specifications of FDB12N50F-VB
Model Number | FDB12N50F-VB |
Model Name | VBsemi Elec FDB12N50F-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 650V 12A 800mΩ@10V,12A 1PCSNChannel TO-263-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.230 grams / 0.078661 oz |
Package / Case | TO-263-2 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 12A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 800mΩ@10V,12A |
Power Dissipation (Pd) | - |
Gate Threshold Voltage (Vgs(th)@Id) | - |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | - |
Total Gate Charge (Qg@Vgs) | - |