FDB12N50F-VB by VBsemi Elec – Specifications

VBsemi Elec FDB12N50F-VB is a FDB12N50F-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 12A 800mΩ@10V,12A 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 12A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@10V,12A
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.23 grams.

Full Specifications of FDB12N50F-VB

Model NumberFDB12N50F-VB
Model NameVBsemi Elec FDB12N50F-VB
CategoryMOSFETs
BrandVBsemi Elec
Description650V 12A 800mΩ@10V,12A 1PCSNChannel TO-263-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.230 grams / 0.078661 oz
Package / CaseTO-263-2
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)12A
Drain Source On Resistance (RDS(on)@Vgs,Id)800mΩ@10V,12A
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-

Compare VBsemi Elec - FDB12N50F-VB With Other 200 Models

Related Models - FDB12N50F-VB Alternative

Scroll to Top