VBsemi Elec FDC658AP-VB is a FDC658AP-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 4.8A 49mΩ@10V,4.8A 1PCSPChannel TSOP-6-1.7mm MOSFETs ROHS. This product comes in a TSOP-6-1.7mm package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 4.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 49mΩ@10V,4.8A
- Type: 1PCSPChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.051 grams.
More on FDC658AP-VB
Full Specifications of FDC658AP-VB
Model Number | FDC658AP-VB |
Model Name | VBsemi Elec FDC658AP-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 30V 4.8A 49mΩ@10V,4.8A 1PCSPChannel TSOP-6-1.7mm MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.051 grams / 0.001799 oz |
Package / Case | TSOP-6-1.7mm |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 4.8A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 49mΩ@10V,4.8A |
Power Dissipation (Pd) | - |
Gate Threshold Voltage (Vgs(th)@Id) | - |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | - |
Total Gate Charge (Qg@Vgs) | - |
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