FDD3N50NZTM-VB by VBsemi Elec – Specifications

VBsemi Elec FDD3N50NZTM-VB is a FDD3N50NZTM-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 4.5A 1.8Ω@10V,4.5A 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 4.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8Ω@10V,4.5A
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.493 grams.

More on FDD3N50NZTM-VB

Full Specifications of FDD3N50NZTM-VB

Model NumberFDD3N50NZTM-VB
Model NameVBsemi Elec FDD3N50NZTM-VB
CategoryMOSFETs
BrandVBsemi Elec
Description650V 4.5A 1.8Ω@10V,4.5A 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.493 grams / 0.01739 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.8Ω@10V,4.5A
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-

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