VBsemi Elec FQD18N20V2TM-VB is a FQD18N20V2TM-VB from VBsemi Elec, part of the MOSFETs. It is designed for 200V 30A 55mΩ@10V,30A 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 30A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@10V,30A
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.
More on FQD18N20V2TM-VB
Full Specifications of FQD18N20V2TM-VB
| Model Number | FQD18N20V2TM-VB |
| Model Name | VBsemi Elec FQD18N20V2TM-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 200V 30A 55mΩ@10V,30A 1PCSNChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.400 grams / 0.01411 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 30A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 55mΩ@10V,30A |
| Power Dissipation (Pd) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |