VBsemi Elec FQD19N10L-VB is a FQD19N10L-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 15A 114mΩ@10V,15A 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 15A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 114mΩ@10V,15A
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.385 grams.
More on FQD19N10L-VB
Full Specifications of FQD19N10L-VB
Model Number | FQD19N10L-VB |
Model Name | VBsemi Elec FQD19N10L-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 100V 15A 114mΩ@10V,15A 1PCSNChannel TO-252 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.385 grams / 0.01358 oz |
Package / Case | TO-252 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 15A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 114mΩ@10V,15A |
Power Dissipation (Pd) | - |
Gate Threshold Voltage (Vgs(th)@Id) | - |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | - |
Total Gate Charge (Qg@Vgs) | - |
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