VBsemi Elec FQP4N60C-VB is a FQP4N60C-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 2.2Ω@10V 3.5V 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.2Ω@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2 grams.
More on FQP4N60C-VB
Full Specifications of FQP4N60C-VB
| Model Number | FQP4N60C-VB |
| Model Name | VBsemi Elec FQP4N60C-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 650V 2.2Ω@10V 3.5V 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.000 grams / 0.070548 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.2Ω@10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V |
| Type | 1PCSNChannel |