VBsemi Elec FTD2017-VB is a FTD2017-VB from VBsemi Elec, part of the MOSFETs. It is designed for 25V 6.6A 22mΩ@4.5V,6.6A 2 N-Channel TSSOP-8 MOSFETs ROHS. This product comes in a TSSOP-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 25V
- Continuous Drain Current (Id): 6.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@4.5V,6.6A
- Type: 2 N-Channel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.95 grams.
More on FTD2017-VB
Full Specifications of FTD2017-VB
| Model Number | FTD2017-VB |
| Model Name | VBsemi Elec FTD2017-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 25V 6.6A 22mΩ@4.5V,6.6A 2 N-Channel TSSOP-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.950 grams / 0.03351 oz |
| Package / Case | TSSOP-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 25V |
| Continuous Drain Current (Id) | 6.6A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 22mΩ@4.5V,6.6A |
| Power Dissipation (Pd) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 2 N-Channel |
| Input Capacitance (Ciss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |