IPD053N08N3G-VB by VBsemi Elec – Specifications

VBsemi Elec IPD053N08N3G-VB is a IPD053N08N3G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 80V 5.5mΩ@10V 2.89V 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.5mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.89V
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.505 grams.

More on IPD053N08N3G-VB

Full Specifications of IPD053N08N3G-VB

Model NumberIPD053N08N3G-VB
Model NameVBsemi Elec IPD053N08N3G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description80V 5.5mΩ@10V 2.89V 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.505 grams / 0.017813 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)80V
Drain Source On Resistance (RDS(on)@Vgs,Id)5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)2.89V
Type1PCSNChannel

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