VBsemi Elec IPD26N06S2L-35-VB is a IPD26N06S2L-35-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 35A 25mΩ@10V,35A 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 35A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,35A
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.386 grams.
More on IPD26N06S2L-35-VB
Full Specifications of IPD26N06S2L-35-VB
Model Number | IPD26N06S2L-35-VB |
Model Name | VBsemi Elec IPD26N06S2L-35-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 60V 35A 25mΩ@10V,35A 1PCSNChannel TO-252 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.386 grams / 0.013616 oz |
Package / Case | TO-252 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 35A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 25mΩ@10V,35A |
Power Dissipation (Pd) | - |
Gate Threshold Voltage (Vgs(th)@Id) | - |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | - |
Total Gate Charge (Qg@Vgs) | - |
Compare VBsemi Elec - IPD26N06S2L-35-VB With Other 200 Models
- IPD26N06S2L-35-VB vs TN2106K-VB
- IPD26N06S2L-35-VB vs WNM2306-3/TR-VB
- IPD26N06S2L-35-VB vs 2SJ377-Z-VB
- IPD26N06S2L-35-VB vs AM2314N-T1-PF-VB
- IPD26N06S2L-35-VB vs AO4932-VB
- IPD26N06S2L-35-VB vs B6020S-VB
- IPD26N06S2L-35-VB vs DMP3130L-7-VB
- IPD26N06S2L-35-VB vs FDMA520PZ-VB
- IPD26N06S2L-35-VB vs FDP8880-VB
- IPD26N06S2L-35-VB vs MMBT7002K-VB