IPD60N10S4L-12-VB by VBsemi Elec – Specifications

VBsemi Elec IPD60N10S4L-12-VB is a IPD60N10S4L-12-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 9mΩ@10V 3.2V 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.2V
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.515 grams.

More on IPD60N10S4L-12-VB

Full Specifications of IPD60N10S4L-12-VB

Model NumberIPD60N10S4L-12-VB
Model NameVBsemi Elec IPD60N10S4L-12-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 9mΩ@10V 3.2V 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.515 grams / 0.018166 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)3.2V
Type1PCSNChannel

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