VBsemi Elec IPP084N06L3 G-VB is a IPP084N06L3 G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 120A 5mΩ@10V,120A 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 120A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@10V,120A
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 4.006 grams.
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Full Specifications of IPP084N06L3 G-VB
| Model Number | IPP084N06L3 G-VB |
| Model Name | VBsemi Elec IPP084N06L3 G-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 60V 120A 5mΩ@10V,120A 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 4.006 grams / 0.141308 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 120A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5mΩ@10V,120A |
| Power Dissipation (Pd) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |