VBsemi Elec IRLU110P-VB is a IRLU110P-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 15A 110mΩ@10V,15A 61W 3V@250uA 1PCSNChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 15A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@10V,15A
- Power Dissipation (Pd): 61W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 70pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 892pF@25V
- Total Gate Charge (Qg@Vgs): 20nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.
More on IRLU110P-VB
Full Specifications of IRLU110P-VB
Model Number | IRLU110P-VB |
Model Name | VBsemi Elec IRLU110P-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 100V 15A 110mΩ@10V,15A 61W 3V@250uA 1PCSNChannel TO-251 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.500 grams / 0.017637 oz |
Package / Case | TO-251 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 15A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 110mΩ@10V,15A |
Power Dissipation (Pd) | 61W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 70pF@25V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 892pF@25V |
Total Gate Charge (Qg@Vgs) | 20nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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