IRLU3410P-VB by VBsemi Elec – Specifications

VBsemi Elec IRLU3410P-VB is a IRLU3410P-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 15A 110mΩ@10V,15A 61W 3V@250uA 1PCSNChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 15A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@10V,15A
  • Power Dissipation (Pd): 61W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 70pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 892pF@25V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.79 grams.

More on IRLU3410P-VB

Full Specifications of IRLU3410P-VB

Model NumberIRLU3410P-VB
Model NameVBsemi Elec IRLU3410P-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 15A 110mΩ@10V,15A 61W 3V@250uA 1PCSNChannel TO-251 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.790 grams / 0.027866 oz
Package / CaseTO-251
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)15A
Drain Source On Resistance (RDS(on)@Vgs,Id)110mΩ@10V,15A
Power Dissipation (Pd)61W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)70pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)892pF@25V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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