IRLZ34PBF-VB by VBsemi Elec – Specifications

VBsemi Elec IRLZ34PBF-VB is a IRLZ34PBF-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 50A 24.3mΩ@10V,21A 150W 2.5V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 24.3mΩ@10V,21A
  • Power Dissipation (Pd): 150W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 170pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.9nF@25V
  • Total Gate Charge (Qg@Vgs): 66nC@5V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.04 grams.

Full Specifications of IRLZ34PBF-VB

Model NumberIRLZ34PBF-VB
Model NameVBsemi Elec IRLZ34PBF-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 50A 24.3mΩ@10V,21A 150W 2.5V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.040 grams / 0.071959 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)50A
Drain Source On Resistance (RDS(on)@Vgs,Id)24.3mΩ@10V,21A
Power Dissipation (Pd)150W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)170pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.9nF@25V
Total Gate Charge (Qg@Vgs)66nC@5V
Operating Temperature-55℃~+175℃@(Tj)

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