ISL9N310AD3ST-VB by VBsemi Elec – Specifications

VBsemi Elec ISL9N310AD3ST-VB is a ISL9N310AD3ST-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 80A 5mΩ@10V,38.8A 205W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@10V,38.8A
  • Power Dissipation (Pd): 205W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 270pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.201nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.424 grams.

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Full Specifications of ISL9N310AD3ST-VB

Model NumberISL9N310AD3ST-VB
Model NameVBsemi Elec ISL9N310AD3ST-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 80A 5mΩ@10V,38.8A 205W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.424 grams / 0.014956 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)5mΩ@10V,38.8A
Power Dissipation (Pd)205W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)270pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.201nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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