IXTP80N12T2-VB by VBsemi Elec – Specifications

VBsemi Elec IXTP80N12T2-VB is a IXTP80N12T2-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 100A 8.52mΩ@10V,30A 250W 3.5V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 100A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 8.52mΩ@10V,30A
• Power Dissipation (Pd): 250W
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
• Reverse Transfer Capacitance (Crss@Vds): 265pF@20V
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 6.55nF@20V
• Total Gate Charge (Qg@Vgs): 105nC@20V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.04 grams.