VBsemi Elec J330-VB is a J330-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 30A 50.4mΩ@10V,14A 41.7W 2.5V@250uA 1PCSPChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 30A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50.4mΩ@10V,14A
- Power Dissipation (Pd): 41.7W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 180pF@20V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 1.765nF@20V
- Total Gate Charge (Qg@Vgs): 67nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.65 grams.
More on J330-VB
Full Specifications of J330-VB
Model Number | J330-VB |
Model Name | VBsemi Elec J330-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 60V 30A 50.4mΩ@10V,14A 41.7W 2.5V@250uA 1PCSPChannel TO-220F-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.650 grams / 0.058202 oz |
Package / Case | TO-220F-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 30A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 50.4mΩ@10V,14A |
Power Dissipation (Pd) | 41.7W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 180pF@20V |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 1.765nF@20V |
Total Gate Charge (Qg@Vgs) | 67nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |