K3150-VB by VBsemi Elec – Specifications

VBsemi Elec K3150-VB is a K3150-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 40A 30.2mΩ@10V,5A 107W 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 30.2mΩ@10V,5A
  • Power Dissipation (Pd): 107W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 90pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.4nF@25V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.485 grams.

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Full Specifications of K3150-VB

Model NumberK3150-VB
Model NameVBsemi Elec K3150-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 40A 30.2mΩ@10V,5A 107W 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.485 grams / 0.017108 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)40A
Drain Source On Resistance (RDS(on)@Vgs,Id)30.2mΩ@10V,5A
Power Dissipation (Pd)107W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)90pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.4nF@25V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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