VBsemi Elec KHB9D5N20F-VB is a KHB9D5N20F-VB from VBsemi Elec, part of the MOSFETs. It is designed for 200V 10A 265mΩ@10V,4.3A 37W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 265mΩ@10V,4.3A
- Power Dissipation (Pd): 37W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 110pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 560pF@25V
- Total Gate Charge (Qg@Vgs): 16nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.33 grams.
More on KHB9D5N20F-VB
Full Specifications of KHB9D5N20F-VB
| Model Number | KHB9D5N20F-VB |
| Model Name | VBsemi Elec KHB9D5N20F-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 200V 10A 265mΩ@10V,4.3A 37W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.330 grams / 0.082188 oz |
| Package / Case | TO-220F-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 10A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 265mΩ@10V,4.3A |
| Power Dissipation (Pd) | 37W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 560pF@25V |
| Total Gate Charge (Qg@Vgs) | 16nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |