LBSS139LT1G-VB by VBsemi Elec – Specifications

VBsemi Elec LBSS139LT1G-VB is a LBSS139LT1G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 250mA 2.8Ω@10V,200mA 300mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 250mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8Ω@10V,200mA
  • Power Dissipation (Pd): 300mW
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 2pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 25pF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.054 grams.

More on LBSS139LT1G-VB

Full Specifications of LBSS139LT1G-VB

Model NumberLBSS139LT1G-VB
Model NameVBsemi Elec LBSS139LT1G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 250mA 2.8Ω@10V,200mA 300mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.054 grams / 0.001905 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)250mA
Drain Source On Resistance (RDS(on)@Vgs,Id)2.8Ω@10V,200mA
Power Dissipation (Pd)300mW
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)2pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)25pF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare VBsemi Elec - LBSS139LT1G-VB With Other 200 Models

Related Models - LBSS139LT1G-VB Alternative

Scroll to Top