VBsemi Elec ME12N04-VB is a ME12N04-VB from VBsemi Elec, part of the MOSFETs. It is designed for 40V 55A 12mΩ@10V,38.8A 100W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 55A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,38.8A
- Power Dissipation (Pd): 100W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 570pF@15V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.801nF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.48 grams.
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Full Specifications of ME12N04-VB
Model Number | ME12N04-VB |
Model Name | VBsemi Elec ME12N04-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 40V 55A 12mΩ@10V,38.8A 100W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.480 grams / 0.016932 oz |
Package / Case | TO-252-2 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 55A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 12mΩ@10V,38.8A |
Power Dissipation (Pd) | 100W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 570pF@15V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.801nF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+175℃@(Tj) |