VBsemi Elec ME20N10-VB is a ME20N10-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 15A 114mΩ@10V,3A 96W 2.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 15A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 114mΩ@10V,3A
- Power Dissipation (Pd): 96W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 60pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 950pF@25V
- Total Gate Charge (Qg@Vgs): 24nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.392 grams.
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Full Specifications of ME20N10-VB
| Model Number | ME20N10-VB |
| Model Name | VBsemi Elec ME20N10-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 15A 114mΩ@10V,3A 96W 2.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.392 grams / 0.013827 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 15A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 114mΩ@10V,3A |
| Power Dissipation (Pd) | 96W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 950pF@25V |
| Total Gate Charge (Qg@Vgs) | 24nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |