MTD20N03HDLT4G-VB by VBsemi Elec – Specifications

VBsemi Elec MTD20N03HDLT4G-VB is a MTD20N03HDLT4G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 50A 7mΩ@10V,21.8A 100W 2V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@10V,21.8A
  • Power Dissipation (Pd): 100W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 370pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.201nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.357 grams.

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Full Specifications of MTD20N03HDLT4G-VB

Model NumberMTD20N03HDLT4G-VB
Model NameVBsemi Elec MTD20N03HDLT4G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 50A 7mΩ@10V,21.8A 100W 2V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.357 grams / 0.012593 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)50A
Drain Source On Resistance (RDS(on)@Vgs,Id)7mΩ@10V,21.8A
Power Dissipation (Pd)100W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)370pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.201nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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