MTD6N15T4G-VB by VBsemi Elec – Specifications

VBsemi Elec MTD6N15T4G-VB is a MTD6N15T4G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 200V 10A 245mΩ@10V,10A 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 10A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 245mΩ@10V,10A
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.474 grams.

More on MTD6N15T4G-VB

Full Specifications of MTD6N15T4G-VB

Model NumberMTD6N15T4G-VB
Model NameVBsemi Elec MTD6N15T4G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description200V 10A 245mΩ@10V,10A 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.474 grams / 0.01672 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)10A
Drain Source On Resistance (RDS(on)@Vgs,Id)245mΩ@10V,10A
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-

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