MTD6P10ET4-VB by VBsemi Elec – Specifications

VBsemi Elec MTD6P10ET4-VB is a MTD6P10ET4-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 8.8A 250mΩ@10V,3.6A 32.1W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 8.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@10V,3.6A
  • Power Dissipation (Pd): 32.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 41pF@50V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.055nF@50V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.396 grams.

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Full Specifications of MTD6P10ET4-VB

Model NumberMTD6P10ET4-VB
Model NameVBsemi Elec MTD6P10ET4-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 8.8A 250mΩ@10V,3.6A 32.1W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.396 grams / 0.013969 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)8.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)250mΩ@10V,3.6A
Power Dissipation (Pd)32.1W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)41pF@50V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.055nF@50V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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