NCE0108AS-VB by VBsemi Elec – Specifications

VBsemi Elec NCE0108AS-VB is a NCE0108AS-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 6.4A 36mΩ@10V,5A 5.9W 3V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 6.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 36mΩ@10V,5A
  • Power Dissipation (Pd): 5.9W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 37pF@50V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.735nF@50V
  • Total Gate Charge (Qg@Vgs): 23nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.056 grams.

Full Specifications of NCE0108AS-VB

Model NumberNCE0108AS-VB
Model NameVBsemi Elec NCE0108AS-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 6.4A 36mΩ@10V,5A 5.9W 3V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.056 grams / 0.037249 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)6.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)36mΩ@10V,5A
Power Dissipation (Pd)5.9W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)37pF@50V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.735nF@50V
Total Gate Charge (Qg@Vgs)23nC@8V
Operating Temperature-55℃~+150℃@(Tj)

Compare VBsemi Elec - NCE0108AS-VB With Other 200 Models

Related Models - NCE0108AS-VB Alternative

Scroll to Top