VBsemi Elec NCE30H10-VB is a NCE30H10-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 98A 35mΩ@10V,28.8A 250W 2.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 98A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@10V,28.8A
- Power Dissipation (Pd): 250W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 370pF@15V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.165nF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3 grams.
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Full Specifications of NCE30H10-VB
Model Number | NCE30H10-VB |
Model Name | VBsemi Elec NCE30H10-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 30V 98A 35mΩ@10V,28.8A 250W 2.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 3.000 grams / 0.105822 oz |
Package / Case | TO-220 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 98A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 35mΩ@10V,28.8A |
Power Dissipation (Pd) | 250W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 370pF@15V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 3.165nF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+175℃@(Tj) |