VBsemi Elec NCE603S-VB is a NCE603S-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 3V@250uA 1PCSNChannel+1PCSPChannel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 26mΩ@10V,4.3A;55mΩ@10V,3.1A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel+1PCSPChannel
- Total Gate Charge (Qg@Vgs): [email protected];[email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.175 grams.
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Full Specifications of NCE603S-VB
| Model Number | NCE603S-VB |
| Model Name | VBsemi Elec NCE603S-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 60V 3V@250uA 1PCSNChannel+1PCSPChannel SOP-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.175 grams / 0.006173 oz |
| Package / Case | SOP-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 26mΩ@10V,4.3A;55mΩ@10V,3.1A |
| Power Dissipation (Pd) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel+1PCSPChannel |
| Input Capacitance (Ciss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | [email protected];[email protected] |
| Operating Temperature | -55℃~+150℃@(Tj) |